laboratoire pierre aigrain
électronique et photonique quantiques
 
laboratoire pierre aigrain
 

Séminaire, 29 mai 2015

Alvydas LISAUSKAS, Vilnius University
Field effect transistors for detection of terahertz radiation

The possibility of an efficient terahertz detection employing plasma wave-related physical phenomena in gated 2D electron gases of field-effect transistors (FETs) has been predicted almost two decades ago. Since then this kind of detection has been implemented in many different material systems like MOSFETs, HEMTs, graphene FETs, nanowire FETs, sCNT-FETs, thus, proving the universality of the phenomena. The seminar will give an introduction on the main physical aspects of rectification in FETs, will overview their performance and discuss on the limits of sensitivity.